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ZXMC4559DN8TA Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMC4559DN8TA Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 11 page ![]() ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 4 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 ⎯ ⎯ V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ 55 mΩ VGS = 10V, ID = 4.5A ⎯ ⎯ 75 VGS = 4.5V, ID = 4.0A Diode Forward Voltage VSD ⎯ 0.85 1.2 V VGS = 0V, IS = 5.5A Forward Transconductance gfs ⎯ 10.2 ⎯ S VDS=15V,ID=4.5A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 1063 ⎯ pF VDS = 30V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 104 ⎯ Reverse Transfer Capacitance Crss ⎯ 64 ⎯ Total Gate Charge (VGS = 5.0V) Qg ⎯ 11 ⎯ nC VDS = 30V, ID = 4.5A Total Gate Charge (VGS = 10V) Qg ⎯ 20.4 ⎯ Gate-Source Charge Qgs ⎯ 4.1 ⎯ Gate-Drain Charge Qgd ⎯ 5.1 ⎯ Turn-On Delay Time tD(on) ⎯ 3.5 ⎯ nS VDD = 30V, ID = 1.0A VGS = 10V, RG = 6.0Ω Turn-On Rise Time tr ⎯ 4.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 26.2 ⎯ Turn-Off Fall Time tf ⎯ 10.6 ⎯ Body Diode Reverse Recovery Time trr ⎯ 22 ⎯ nS IF = 2.2A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 21.4 ⎯ nC IF = 2.2A, di/dt = 100A/μs |
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