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ZXMC4559DN8TA Datasheet(PDF) 4 Page - Diodes Incorporated

Part # ZXMC4559DN8TA
Description  COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
PDF  11 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMC4559DN8TA Datasheet(HTML) 4 Page - Diodes Incorporated

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ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
4 of 11
www.diodes.com
March 2014
© Diodes Incorporated
ZXMC4559DN8
Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1.0
⎯
⎯
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
⎯
⎯
55
mΩ
VGS = 10V, ID = 4.5A
⎯
⎯
75
VGS = 4.5V, ID = 4.0A
Diode Forward Voltage
VSD
⎯
0.85
1.2
V
VGS = 0V, IS = 5.5A
Forward Transconductance
gfs
⎯
10.2
⎯
S
VDS=15V,ID=4.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
⎯
1063
⎯
pF
VDS = 30V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
⎯
104
⎯
Reverse Transfer Capacitance
Crss
⎯
64
⎯
Total Gate Charge (VGS = 5.0V)
Qg
⎯
11
⎯
nC
VDS = 30V, ID = 4.5A
Total Gate Charge (VGS = 10V)
Qg
⎯
20.4
⎯
Gate-Source Charge
Qgs
⎯
4.1
⎯
Gate-Drain Charge
Qgd
⎯
5.1
⎯
Turn-On Delay Time
tD(on)
⎯
3.5
⎯
nS
VDD = 30V, ID = 1.0A
VGS = 10V, RG = 6.0Ω
Turn-On Rise Time
tr
⎯
4.1
⎯
Turn-Off Delay Time
tD(off)
⎯
26.2
⎯
Turn-Off Fall Time
tf
⎯
10.6
⎯
Body Diode Reverse Recovery Time
trr
⎯
22
⎯
nS
IF = 2.2A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
⎯
21.4
⎯
nC
IF = 2.2A, di/dt = 100A/μs



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