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ZXMP6A16DN8 Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A16DN8 Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page ![]() ZXMP6A16DN8 Document number: DS33586 Rev. 4 - 2 4 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMP6A16DN8 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ ⎯ V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 11) RDS (ON) ⎯ ⎯ 85 m Ω VGS = -10V, ID = -2.9A ⎯ 125 VGS = -4.5V, ID = -2.4A Forward Transconductance (Notes 11 & 12) gfs ⎯ 7.2 ⎯ S VDS = -15V, ID = -2.9A Diode Forward Voltage (Note 11) VSD ⎯ -0.85 -0.95 V IS = -3.4A, VGS = 0V, TJ = +25°C Reverse recovery time (Note 12) trr ⎯ 29.2 ⎯ ns IS = -2A, di/dt = 100A/µs, TJ = +25°C Reverse recovery charge (Note 12) Qrr ⎯ 39.6 ⎯ nC DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Ciss ⎯ 1021 ⎯ pF VDS = -30V, VGS = 0V, f = 1MHz Output Capacitance Coss ⎯ 83.1 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 56.4 ⎯ pF Total Gate Charge (Note 13) Qg ⎯ 12.1 ⎯ nC VGS = -5V VDS = -30V, ID = -2.9A Total Gate Charge (Note 13) Qg ⎯ 24.2 ⎯ nC VGS = -10V Gate-Source Charge (Note 13) Qgs ⎯ 2.5 ⎯ nC Gate-Drain Charge (Note 13) Qgd ⎯ 3.7 ⎯ nC Turn-On Delay Time (Note 13) tD(on) ⎯ 3.5 ⎯ ns VDD = -30V, VGS = -10V, ID = -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 13) tr ⎯ 4.1 ⎯ ns Turn-Off Delay Time (Note 13) tD(off) ⎯ 35 ⎯ ns Turn-Off Fall Time (Note 13) tf ⎯ 10 ⎯ ns Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. |
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