ZXMP6A18DN8

Document Number DS33592 Rev 3 - 2

2 of 8

www.diodes.com

December 2014

© Diodes Incorporated

ZXMP6A18DN8

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

(Notes 7 & 9)

-4.8

A

(Notes 7 & 9)

-3.8

(Notes 6 & 9)

-3.7

Pulsed Drain Current

(Notes 8)

-23

A

Continuous Source Current (Body Diode)

(Notes 7)

-3.3

A

Pulsed Source Current (Body Diode)

(Notes 8)

-23

A

Single Pulsed Avalanche Energy (L = 0.1mH)

(Note 11)

38.2

mJ

Single Pulsed Avalanche Current (L = 0.1mH)

(Note 11)

27.6

A

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Notes 6 & 9)

1.25

10

W

mW/°C

(Notes 6 & 10)

1.8

14

(Notes 7 & 9)

2.1

17

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

+100

°C/W

(Notes 7 & 10)

+69

(Notes 7 & 9)

+58

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

6. For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.

7. For a dual device surface mounted FR4 PCB measured at t

≤ 10 sec.

8. Repetitive rating 25mm x 25mm x 1.6mm FR4 PCB, D = 0.02, pulse width = 300µs – pulse width limited by maximum junction temperature.

9. For a dual device with one active die.

10. For a device with two active die running at equal power.