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ZXMP6A18DN8 Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A18DN8 Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page  ZXMP6A18DN8 Document Number DS33592 Rev 3 - 2 4 of 8 www.diodes.com December 2014 © Diodes Incorporated ZXMP6A18DN8 Electrical Characteristics (@TA= +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1 ⎯ ⎯ V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 12) RDS(ON) ⎯ ⎯ 0.055 Ω VGS = -10V, ID = -3.5A 0.08 VGS = -4.5V, ID = -2.9A Forward Transconductance (Notes 12 & 14) gfs ⎯ 8.7 ⎯ S VDS = -15V, ID = -3.5A Diode Forward Voltage (Note 12) VSD ⎯ -0.85 -0.95 V IS = -4.2A, VGS = 0V, TJ = +25°C Reverse Recovery Time (Note 14) trr 37 ⎯ ns IF = -2.1A, di/dt = 100A/µs, TJ = +25°C Reverse Recovery Charge (Note 14) Qrr ⎯ 56 ⎯ nC DYNAMIC CHARACTERISTICS (Note 14) Input Capacitance Ciss ⎯ 1580 ⎯ pF VDS = -30V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 160 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 140 ⎯ pF Total Gate Charge (Note 13) Qg ⎯ 23 ⎯ nC VGS = -5V VDS = -30V ID = -3.5A Total Gate Charge (Note 13) Qg ⎯ 44 ⎯ nC VGS = -10V Gate-Source Charge (Note 13) Qgs ⎯ 3.9 ⎯ nC Gate-Drain Charge (Note 13) Qgd ⎯ 9.8 ⎯ nC Turn-On Delay Time (Note 13) tD(on) ⎯ 4.6 ⎯ ns VDD = -30V, VGS = -10V ID = -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 13) tr ⎯ 5.8 ⎯ ns Turn-Off Delay Time (Note 13) tD(off) ⎯ 55 ⎯ ns Turn-Off Fall Time (Note 13) tf ⎯ 23 ⎯ ns Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 13. Switching characteristics are independent of operating junction temperatures. 14. For design aid only, not subject to production testing. |
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