Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA5489Z

DC to 4000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

0

6

12

18

24

012

3

4

5

6

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V

(Typ.)



High Gain: 17.9dB at

1950MHz



Cascadable 50

Ω



Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS100915



Package: SOT-89

SGA5489ZDC

to 4000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

17.7

19.7

21.7

dB

850MHz

17.9

dB

1950MHz

17.1

dB

2400MHz

Output Power at 1dB Compression

16.0

dBm

850MHz

14.6

dBm

1950MHz

Output Third Intercept Point

30.8

dBm

850MHz

27.4

dBm

1950MHz

Bandwidth Determined by Return

Loss

4000

MHz

>10dB

Input Return Loss

15.4

dB

1950MHz

Output Return Loss

14.0

dB

1950MHz

Noise Figure

2.4

dB

1950MHz

Device Operating Voltage

3.1

3.3

4.1

V

Device Operating Current

54

60

66

mA

Thermal Resistance

(Junction - Lead)

97

°C/W