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IRF7171MPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7171MPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF7171MTRPbF 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 25, 2015 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 40 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 5.3 6.5 m VGS = 10V, ID = 56A VGS(th) Gate Threshold Voltage 2.0 ––– 3.6 V VDS = VGS, ID = 150µA VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1 µA VDS = 80 V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 80 ––– ––– S VDS = 10V, ID =56A Qg Total Gate Charge ––– 36 54 nC Qgs1 Pre– Vth Gate-to-Source Charge ––– 6.9 ––– VDS = 50V Qgs2 Post– Vth Gate-to-Source Charge ––– 2.4 ––– VGS = 10V Qgd Gate-to-Drain Charge ––– 13 ––– ID = 56A Qgodr Gate Charge Overdrive ––– 13.7 ––– See Fig.8 Qsw Switch Charge (Qgs2 + Qgd) ––– 15.4 ––– Qoss Output Charge ––– 120 ––– nC VDS = 50V, VGS = 0V RG Gate Resistance ––– 1.0 ––– td(on) Turn-On Delay Time ––– 9.3 ––– ns VDD = 50V, VGS = 10V tr Rise Time ––– 27 ––– ID = 56A td(off) Turn-Off Delay Time ––– 15 ––– RG= 1.8 tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 2160 ––– pF VGS = 0V Coss Output Capacitance ––– 970 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 60 ––– ƒ = 1.0MHz Coss Output Capacitance ––– 4660 ––– VGS = 0V, VDS = 1.0V, ƒ =1.0MHz Coss Output Capacitance ––– 580 ––– VGS = 0V, VDS = 80V, ƒ =1.0MHz Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 95 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 330 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 56A, VGS = 0V trr Reverse Recovery Time ––– 66 ––– ns TJ = 25°C, IF = 56A, VDD = 50V Qrr Reverse Recovery Charge ––– 126 ––– nC di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2% D S G |
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