PBSS5350Z datasheet(4/9 Pages) PHILIPS

4 / 9 page

2003 May 13

NXP Semiconductors

Product data sheet

50 V low VCEsat PNP transistor

PBSS5350Z

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current VCB = −50 V; IE = 0

−

−100

VCB = −50 V; IE = 0; Tj = 150 °C

−

−50

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−100

hFE

DC current gain

VCE = −2 V;

IC = −500 mA

200

−

IC = −1 A; note 1

200

−

IC = −2 A; note 1

100

−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −50 mA

−

−100

IC = −1 A; IB = −50 mA

−

−180

IC = −2 A; IB = −200 mA; note 1

−

−300

RCEsat

equivalent on-resistance

IC = −2 A; IB = −200 mA; note 1

−

120

<150

VBEsat

base-emitter saturation

voltage

IC = −2 A; IB = −200 mA; note 1

−

−1.2

VBEon

base-emitter turn-on voltage

VCE = −2 V; IC = −1 A; note 1

−

−1.1

transition frequency

IC = −100 mA; VCE = −5 V;

f = 100 MHz

100

−

MHz

collector capacitance

VCB = −10 V; IE = Ie = 0; f = 1 MHz

−

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