IRFS7437PBF datasheet(2/12 Pages) IRF

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January 6, 2015

IRFS7437PbF/IRFSL7437PbF

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.069mH

RG = 50Ω, IAS = 100A, VGS =10V.

ISD ≤ 100A, di/dt ≤ 1166A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

Rθis measured at TJ approximately 90°C.

Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 40A, VGS =10V.

Absolute Maximum Ratings

Symbol

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

IDM

Pulsed Drain Current

PD @TC = 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery

V/ns

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy

EAS (Thermally limited)

Single Pulse Avalanche Energy

IAR

Avalanche Current

Ãd

EAR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.65

RθJA

Junction-to-Ambient (PCB Mount) , D2Pak

–––

°C/W

°C

300

350

See Fig. 14, 15, 22a, 22b

230

3.0

802

-55 to + 175

± 20

1.5

10lbf

x in (1.1Nx m)

Max.

250

180

1000

195

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

ΔV(BR)DSS/ΔTJ

Breakdown Voltage Temp. Coefficient

–––

0.029

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.4

1.8

–––

2.0

–––

VGS(th)

Gate Threshold Voltage

2.2

3.0

3.9

IDSS

Drain-to-Source Leakage Current

–––

1.0

μA

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

2.2

–––

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 100A

VGS = 6.0V, ID = 50A

VDS = VGS, ID = 150μA

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

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