ATF-501P8 datasheet(2/22 Pages) AVAGO

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ATF-501P8 Absolute Maximum Ratings[1]

Absolute

Symbol

Parameter

Units

Maximum

VDS

Drain–Source Voltage[2]

VGS

Gate–Source Voltage[2]

-5 to 0.8

VGD

Gate Drain Voltage[2]

-5 to 1

IDS

Drain Current[2]

IGS

Gate Current

Pdiss

Total Power Dissipation[3]

3.5

Pin max.

RF Input Power

dBm

TCH

Channel Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

θch_b

Thermal Resistance[4]

°C/W

Notes:

1. Operation of this device in excess of

any one of these parameters may cause

permanent damage.

2. Assumes DC quiescent conditions.

3. Board (package belly) temperatureTB is

25°C. Derate 43.5 mW/°C for TB > 69.5°C.

4. Channel-to-board

thermal

resistance

measured using 150°C Liquid Crystal

Measurement method.

Notes:

5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have

nominal values anywhere between the upper and lower limits.

6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have

been de-embedded from actual measurements.

Figure 1. Typical IV curve (Vgs = 0.01V) per step.

Vds (V)

800

700

600

500

400

300

200

100

Vgs=0.6V

Vgs=0.55V

Vgs=0.5V

Vgs=0.7V

Vgs=0.65V

Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[5,6]

Figure 2. P1dB.

P1dB (dBm)

27.5

30.5

28.5

29.5

120

100

Cpk=1.76

Stdev=0.3

+3 Std

–3 Std

Figure 3. PAE.

PAE (%)

120

100

Cpk=1.51

Stdev=3.38

+3 Std

–3 Std

Figure 4. Gain.

GAIN (dB)

100

Cpk=1.61

Stdev=0.33

+3 Std

–3 Std

Figure 5. OIP3.

OIP3 (dBm)

100

Cpk=1.1

Stdev=0.87

+3 Std

–3 Std

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