2

Absolute

Symbol

Parameter

Units

Maximum

V

DS

V

5

V

GS

V

‑5 to +1

V

GD

V

5

I

DS

mA

120

I

GS

mA

2

P

diss

mW

360

P

in max.

dBm

20

T

CH

Channel Temperature

°C

150

T

STG

Storage Temperature

°C

‑65 to 150

θ

jc

°C/W

212

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

3. Source lead temperature is 25°C. Derate

4.7 mW/°C for T

4. Thermal resistance measured using

150°C Liquid Crystal Measurement

method.

5. The device can handle +20 dBm RF­ Input

Power provided I

P

applications section for additional informa‑

tion.

Figure 1. Typical I-V Curves.

0.4V

0.5V

0.6V

0.7V

0.3V

0

2

1

4

6

5

3

7

120

100

80

60

40

20

0

OIP3 (dBm)

Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.

LSL = 33.0, Nominal = 35.82

29

35

32

38

41

320

240

160

80

0

Cpk = 0.85

Stdev = 1.14

-3 Std

GAIN (dB)

Figure 3. Gain @ 2 GHz, 3 V, 60 mA.

LSL = 15.5, Nominal = 17.5, USL = 18.5

15

17

16

19

18

20

Cpk = 1.16

Stdev = 0.30

-3 Std

+3 Std

320

240

160

80

0

NF (dB)

Figure 4. NF @ 2 GHz, 3 V, 60 mA.

Nominal = 0.5, USL = 0.9

0.3

0.7

0.5

0.9

1.1

300

250

200

150

100

50

0

Cpk = 1.72

Stdev = 0.072

+3 Std

Notes:

6. Distribution data sample size is 500 samples taken from 6 different wafers. F­uture wafers allocated to this product may have nominal values

anywhere between the upper and lower limits.

7. Measurements made on production test board. This circuit represents a trade‑off between an optimal noise match and a realizeable match

based on production test equipment. Circuit losses have been de‑embedded from actual measurements.