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UT4101G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UT4101G-AE3-R
Description  P-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4101G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT4101
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-164.D
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8.0
V
Continuous Drain Current (Note 3)
ID
-2.4
A
Pulsed Drain Current (Note 1, 2)
IDM
-7.5
A
Power Dissipation
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction-to-Ambient
θJA
100
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250µA
-20
V
Drain-Source Leakage Current
IDSS
VDS =-16 V, VGS =0 V
-1.0
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±8.0 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-0.40 -0.72
-1.5
V
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS =-4.5 V, ID =-1.6 A
70
85
mΩ
VGS =-2.5 V, ID =-1.3 A
90
120
mΩ
VGS =-1.8 V, ID =-0.9 A
112
210
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-10 V, VGS =0V,
f=1MHz
675
pF
Output Capacitance
COSS
100
pF
Reverse Transfer Capacitance
CRSS
75
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=-4.5V,VDS=-10V,RG
=6.0 Ω,
ID =-1.6A
7.5
ns
Turn-ON Rise Time
tR
12.6
ns
Turn-OFF Delay Time
tD(OFF)
30.2
ns
Turn-OFF Fall-Time
tF
21.0
ns
Gate Charge
QG
VDS=-10 V, VGS =-4.5 V, ID
=-1.6A
7.5
8.5
nC
Gate Source Charge
QGS
VDS=-10 V, ID =-1.6A
1.2
nC
Gate Drain Charge
QGD
2.2
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-2.4 A
-0.82
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2.4
A
Reverse Recovery Time
tRR
VGS=0V, dISD/dt=100A/μs,
IS =-1.6A
12.8
15
ns
Reverse Recovery Charge
QRR
1008
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.



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