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UT4101G-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT4101G-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-164.D P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 UT4101G-AE2-R SOT-23-3 S G D Tape Reel UT4101G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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