7N60KL-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

7N60K-MTQ

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R205-025.f



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

Continuous Drain Current

Pulsed Drain Current (Note 2)

IDM

24.8

Single Pulsed (Note 3)

EAS

340

Avalanche Energy

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.8

TO-220

142

TO-220F/TO-220F1

TO-220F2

Power Dissipation

TO-252

Junction Temperature

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L = 18.33mH, IAS = 7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 7A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

62.5

°C/W

Junction to Ambient

TO-252

θJA

110

°C/W

TO-220

0.88

°C/W

TO-220F/TO-220F1

TO-220F2

2.6

°C/W

Junction to Case

TO-252

θJC

2.1

°C/W

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