7N60KL-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

7N60K-MTQ

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R205-025.f



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

600

VDS=600V, VGS=0V

μA

Drain-Source Leakage Current

IDSS

VDS=480V, VGS=0V, TJ =125°C

μA

Forward

VG=30V, VDS=0V

100

Gate- Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100

Breakdown Voltage Temperature

Coefficient

△

BVDSS/△TJ ID=250μA, Referenced to 25°C

0.53

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3.5A

1.4

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

540

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

120

Turn-Off Fall Time

VDD=30V, ID =0.5A, RG =25Ω

(Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

6.7

Gate-Drain Charge

QGD

VDS=50V, ID=1.3A, VGS=10V

IG=100μA (Note 1, 2)

5.7

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=7A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Body Diode Reverse Recovery Time

tRR

ISD=7A, dIS/dt=100A/µs

368

Body Diode Reverse Recovery Charge

QRR

3.5

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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