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KAI-04050 Datasheet(PDF) 13 Page - ON Semiconductor

Part # KAI-04050
Description  INTERLINE CCD IMAGE SENSOR
PDF  49 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-04050 Datasheet(HTML) 13 Page - ON Semiconductor

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KAI-04050 Image Sensor
www.truesenseimaging.com
Revision 5.0 PS-0009 Pg. 13
Imaging Performance
TYPICAL OPERATION CONDITIONS
Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.
Description
Condition
Notes
Light Source
Continuous red, green and blue LED illumination
1
Operation
Nominal operating voltages and timing
Notes:
1.
For monochrome sensor, only green LED used.
SPECIFICATIONS
All Configurations
Description
Symbol
Min.
Nom.
Max.
Units
Sampling
Plan
Temperature
Tested At (°C)
Notes
Dark Field Global Non-Uniformity
DSNU
-
-
2.0
mVpp
Die
27, 40
Bright Field Global Non-
Uniformity
-
2.0
5.0
%rms
Die
27, 40
1
Bright Field Global Peak to Peak
Non-Uniformity
PRNU
-
5.0
15.0
%pp
Die
27, 40
1
Bright Field Center Non-
Uniformity
-
1.0
2.0
%rms
Die
27, 40
1
Maximum Photoresponse
Nonlinearity
NL
-
2
-
%
Design
2
Maximum Gain Difference
Between Outputs
G
-
10
-
%
Design
2
Maximum Signal Error due to
Nonlinearity Differences
NL
-
1
-
%
Design
2
Horizontal CCD Charge Capacity
HNe
-
55
-
ke-
Design
Vertical CCD Charge Capacity
VNe
-
40
-
ke-
Design
Photodiode Charge Capacity
PNe
-
20
-
ke-
Die
27, 40
3
Horizontal CCD Charge Transfer
Efficiency
HCTE
0.999995
0.999999
-
Die
Vertical CCD Charge Transfer
Efficiency
VCTE
0.999995
0.999999
-
Die
Photodiode Dark Current
Ipd
-
7
70
e/p/s
Die
40
Vertical CCD Dark Current
Ivd
-
100
300
e/p/s
Die
40
Image Lag
Lag
-
-
10
e-
Design
Antiblooming Factor
Xab
300
-
-
Design
Vertical Smear
Smr
-
-100
-
dB
Design
Read Noise
ne-T
-
12
-
e-rms
Design
4
Dynamic Range
DR
-
64
-
dB
Design
4, 5
Output Amplifier DC Offset
Vodc
-
9.4
-
V
Die
27, 40
Output Amplifier Bandwidth
f-3db
-
250
-
MHz
Die
6
Output Amplifier Impedance
ROUT
-
127
-
Ohms
Die
27, 40
Output Amplifier Sensitivity
V/N
-
34
-
μV/e-
Design



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