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2N3501 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N3501
Description  NPN BIPOLAR TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3501 Datasheet(HTML) 1 Page - Microsemi Corporation

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2N3501
150 Volts
500mAmps
Features
• Meets MIL-S-19500/366
• Collector-Base Voltage 150V
• Collector Current: 500 mA
• Fast Switching 1265 nS
RATING
SYMBOL
MAX.
UNIT
Collector-Emitter Voltage
VCEO
150
Vdc
Collector-Base Voltage
VCBO
150
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current—Continuous
IC
300
mAdc
Total Device Dissipation
@ TA = 25
o
C
Derate above 25
o
C
PD
1.0
5.71
Watt
mW/
o
C
Total Device Dissipation
@ TC = 25
o
C
Derate above 25
o
C
PD
5.0
28.6
Watts
mW/
o
C
Operating Temperature Range
TJ
-55 to
+200
o
C
Storage Temperature Range
TS
-55 to
+200
o
C
Thermal Resistance, Junction to Ambient
RθJA
175
o
C/W
Thermal Resistance, Junction to Case
RθJC
35
o
C/W
Maximum Ratings
Datasheet# MSC0282A 5/19/97
NPN
BIPOLAR
TRANSISTOR
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
Mechanical Outline


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