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2N3501 Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N3501 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 2 page ![]() CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT Off Characteristics Collector-Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) BVCEO 150 -- -- Vdc Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) BVCBO 150 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) BVEBO 6.0 -- -- Vdc Collector Cutoff Current (VCB = 75 Vdc, IE = 0) (VCB = 75 Vdc, IE = 0, TA = 150 o C) ICBO -- -- -- -- 0.05 50 µAdc Emitter Cutoff Current (VEB(off) = 4.0 Vdc, IC = 0) IEBO -- -- 25 nAdc D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 10 Vdc)(1) (Ic = 150 mAdc, VCE = 10Vdc) @ 55C (IC = 300 mAdc, VCE = 10 Vdc)(1) hFE 35 50 75 100 45 20 -- -- -- -- -- -- -- -- -- 300 -- -- -- Collector-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 150 mAdc, IB = 15 mAdc) VCE(Sat) -- -- -- -- 0.2 0.4 Vdc Base-Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 150 mAdc, IB = 15 mAdc) VBE(Sat) -- -- -- -- 0.8 1.2 Vdc Magnitude of common emitter small-signal short-circuit forward current transfer ratio (VCE = 20 Vdc, IC = 20 mAdc, f = 100 MHz) /hfe/ 1.5 -- 8 -- Output Capacitance (VCB = 10 Vdc, IE = 0, 100kHz < f < 1MHz) COBO -- -- 8.0 pf Input Capacitance (VEB = 0.5 Vdc, IC = 0, 100kHz < f < 100MHz) CIBO -- -- 80 pf Small -signal Current Gain (Ic = 10mAdc, VCE = 10Vdc, f = 1.0 kHz) hfe 75 -- 300 Noise figure (VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz) NF 16 dB Noise figure ( VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz) NF 6 dB Turn - on time ( VEB = 12Vdc, IC = 150mAdc, IB1 = 15mAdc) ton 115 nS Turn - off time ( IC = 150mAdc, IB1 = IB2 = -15mAdc) toff 1150 nS Electrical Parameters (TA @ 25 °°C unless otherwise specified) 2N3501 (1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% Datasheet# MSC0282A 5/19/97 |
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