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2N3501 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N3501
Description  NPN BIPOLAR TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3501 Datasheet(HTML) 2 Page - Microsemi Corporation

  2N3501 Datasheet HTML 1Page - Microsemi Corporation 2N3501 Datasheet HTML 2Page - Microsemi Corporation  
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CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
BVCEO
150
--
--
Vdc
Collector-Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
BVCBO
150
--
--
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
BVEBO
6.0
--
--
Vdc
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
(VCB = 75 Vdc, IE = 0, TA = 150
o
C)
ICBO
--
--
--
--
0.05
50
µAdc
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0)
IEBO
--
--
25
nAdc
D.C. Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(Ic = 150 mAdc, VCE = 10Vdc) @ 55C
(IC = 300 mAdc, VCE = 10 Vdc)(1)
hFE
35
50
75
100
45
20
--
--
--
--
--
--
--
--
--
300
--
--
--
Collector-Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 150 mAdc, IB = 15 mAdc)
VCE(Sat)
--
--
--
--
0.2
0.4
Vdc
Base-Emitter Saturation Voltage(1)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 150 mAdc, IB = 15 mAdc)
VBE(Sat)
--
--
--
--
0.8
1.2
Vdc
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(VCE = 20 Vdc, IC = 20 mAdc, f = 100 MHz)
/hfe/
1.5
--
8
--
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100kHz < f < 1MHz)
COBO
--
--
8.0
pf
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100kHz < f < 100MHz)
CIBO
--
--
80
pf
Small -signal Current Gain
(Ic = 10mAdc, VCE = 10Vdc, f = 1.0 kHz)
hfe
75
--
300
Noise figure
(VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz)
NF
16
dB
Noise figure
( VCE = 10Vdc, IC = 0.5mAdc; Rg = 1kohms, f = 1MHz)
NF
6
dB
Turn - on time
( VEB = 12Vdc, IC = 150mAdc, IB1 = 15mAdc)
ton
115
nS
Turn - off time
( IC = 150mAdc, IB1 = IB2 = -15mAdc)
toff
1150
nS
Electrical Parameters (TA @ 25
°°C unless otherwise specified)
2N3501
(1)
Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%
Datasheet# MSC0282A 5/19/97



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