SSF2N60D2

600V N-Channel MOSFET

Preliminary

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Rev.1.0

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

2

1.3

8

A

34

W

Linear Derating Factor

0.27

W/°C

Drain-Source Voltage

600

V

Gate-to-Source Voltage

± 30

V

Single Pulse Avalanche Energy @ L=30mH

115

mJ

Avalanche Current @ L=30mH

2.52

A

Operating Junction and Storage Temperature Range

-55 to +150

°C

600V

3.7Ω (typ.)

2A

TO-252

Marking and Pin

Assignment

Schematic Diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature



Lead free product

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.