6AM13 datasheet(5/12 Pages) HITACHI

Part #	6AM13

Description	Silicon N-Channel/P-Channel Complementary Power MOS FET Array

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 12 page

6AM13

–20

–2

–5

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

–16

–4

–1

–3

–4

–8

–12

VDS = –10 V

Pulse Test

TC = 25°C

75°C

–25°C

–2.0

–4

–10

Gate to Source Voltage VGS (V)

–1.6

–0.4

–2

–6

–8

–0.8

–1.2

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

ID = –2 A

Pulse Test

–5 A

–10 A

–15 A

0.5

–5

–50

Drain Current ID (A)

0.2

0.02

–2

–10

–20

0.01

0.05

0.1

Static Drain to Source on State

Resistance vs. Drain Current

Pulse Test

–1

0.005

–100

VGS = –4 V

–10 V

0.25

160

Case Temperature TC (°C)

0.20

0.05

120

0.10

0.15

Static Drain to Source on State

Resistance vs. Temperature

Pulse Test

–40

–10 A

–2, –5 A

VGS = –4 V

VGS = –10 V

–2, –5, –10 A

–15 A

6AM13 Datasheet(PDF) 5 Page - Hitachi Semiconductor

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