MMDF2C02HD datasheet(3/13 Pages) ONSEMI

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MMDF2C02HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 4)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS − continued (Note 6)

Total Gate Charge

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

(N)

(P)

−

12.5

Gate−Source Charge

(N)

(P)

−

1.3

1.2

−

Gate−Drain Charge

(N)

(P)

−

2.8

5.0

−

(N)

(P)

−

2.4

4.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage (Note 5)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

−

0.79

1.5

1.3

2.1

Vdc

Reverse Recovery Time

(IS = 3.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/μs)

(IS = 2.0 Adc, VAS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

(N)

(P)

−

(N)

(P)

−

(N)

(P)

−

5.0

−

Reverse Recovery Stored

Charge

QRR

(N)

(P)

−

0.025

0.034

−

μC

4. Negative signs for P−Channel device omitted for clarity.

5. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperature.

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