© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 2

1

Publication Order Number:

MMDFS2P102/D

MMDFS2P102

Power MOSFET

2 Amps, 20 Volts

P−Channel SO−8, FETKYt

level MOSFETs packaged with industry leading, low forward drop,

low leakage Schottky Barrier rectifiers to offer high efficiency

components in a space saving configuration. Independent pinouts for

MOSFET and Schottky die allow the flexibility to use a single

component for switching and rectification functions in a wide variety

of applications such as Buck Converter, Buck−Boost, Synchronous

Rectification, Low Voltage Motor Control, and Load Management in

Battery Packs, Chargers, Cell Phones and other Portable Products.

Board Space Savings

(Note 1.)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

20

Vdc

20

Vdc

Gate−to−Source Voltage − Continuous

"20

Vdc

Drain Current (Note 3.)

− Single Pulse (tp v 10 ms)

3.3

2.1

20

Adc

Apk

(Note 2.)

2.0

Watts

Single Pulse Drain−to−Source Avalanche

324

mJ

1. Negative sign for P−channel device omitted for clarity.

2. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.

3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

10 sec. max.

Anode

1

2

3

4

8

7

6

5

Top View

Anode

Source

Gate

Cathode

Cathode

Drain

Drain

Device

Package

Shipping

ORDERING INFORMATION

MMDFS2P102R2

SO−8

2500 Tape & Reel

http://onsemi.com

D

S

G

P−Channel

SO−8

CASE 751

STYLE 18

LYWW

MARKING

DIAGRAM

2P102

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

1

8

2 AMPERES

20 VOLTS