MTP30P06VG datasheet(2/7 Pages) ONSEMI

2 / 7 page

MTP30P06V

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

100

mAdc

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.6

5.3

4.0

−

Vdc

mV/°C

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 15 Adc)

RDS(on)

−

0.067

0.08

Drain−Source On−Voltage

(VGS = 10 Vdc, ID = 30 Adc)

(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)

VDS(on)

−

2.0

−

2.9

2.8

Vdc

Forward Transconductance

(VDS = 8.3 Vdc, ID = 15 Adc)

gFS

5.0

7.9

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)

Ciss

−

1562

2190

Output Capacitance

Coss

−

524

730

Transfer Capacitance

Crss

−

154

310

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 30 Adc,

VGS = 10 Vdc, RG = 9.1 W)

td(on)

−

14.7

Rise Time

−

25.9

Turn−Off Delay Time

td(off)

−

200

Fall Time

−

52.4

100

Gate Charge (See Figure 8)

(VDS = 48 Vdc, ID = 30 Adc, VGS = 10 Vdc)

−

9.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

2.3

1.9

3.0

−

Vdc

Reverse Recovery Time

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

175

−

107

−

Reverse Recovery Stored Charge

QRR

−

0.965

−

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

−

3.5

4.5

−

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

−

7.5

−

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

MTP30P06VG Datasheet(PDF) 2 Page - ON Semiconductor

MTP30P06VG Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL