NTMFS4C01N datasheet(4/6 Pages) ONSEMI

4 / 6 page

NTMFS4C01N

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.1

100

10k

100k

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

QG, TOTAL GATE CHARGE (nC)

RG, GATE RESISTANCE (W)

140

100

0.1

1000

100

VDS = 15 V

ID = 30 A

TJ = 25°C

QGS

QGD

VGS = 0 V

TJ = 25°C

f = 1 MHz

CRSS

COSS

CISS

100

120

VDS

VGS

VGS = 4.5 V

VDD = 15 V

ID = 15 A

td(off)

td(on)

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1.0

0.8

0.6

0.4

0.3

0.1

100

1000

0.5

0.7

0.9

TJ = 25°C

TJ = −55°C

TJ = 150°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

0.1

100

1000

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

100 ms

1 ms

10 ms

VGS ≤ 10 V

TC = 25°C

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