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DMN3033LSDQ Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN3033LSDQ
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3033LSDQ Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN3033LSDQ
Document number: DS37965 Rev. 1 - 2
2 of 6
www.diodes.com
July 2015
© Diodes Incorporated
DMN3033LSDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
20
V
Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
ID
6.9
5.8
A
Pulsed Drain Current (Note 7)
IDM
30
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
2
W
Thermal Resistance, Junction to Ambient
RθJA
62.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
100
nA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V


1
μA
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
1
2.1
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
13
22
20
27
m
Ω
VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5A
Forward Transconductance
gfs
7
S
VDS =5V, ID = 6.9A
Diode Forward Voltage (Note 8)
VSD
0.5
1.2
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
725
pF
VDS = 15V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
114
pF
Reverse Transfer Capacitance
Crss
92
pF
Gate Resistance
RG

0.89

Ω
VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
Qg
6.4
13
nC
VGS = 4.5V, VDS = 15V, ID =5A
VGS = 10V, VDS = 15V, ID = 6.9A
Gate-Source Charge
Qgs
1.9
nC
VGS = 4.5V, VDS = 15V, ID = 6.9A
Gate-Drain Charge
Qgd
3.2
nC
VGS = 4.5V, VDS = 15V, ID = 6.9A
Turn-On Delay Time
td(on)
11
ns
VDD = 15V, VGS = 10V,
RD = 1.8Ω, RG = 6Ω
Turn-On Rise Time
tr
7
ns
Turn-Off Delay Time
td(off)
63
ns
Turn-Off Fall Time
tf
30
ns
Notes:
6. Device mounted on 2 oz. Copper pads on FR-4 PCB with RθJA = 62.5°C/W.
7. Pulse width
10μS, Duty Cycle 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



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