DMN3033LSDQ datasheet(4/6 Pages) DIODES

Part #	DMN3033LSDQ

Description	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 6 page

DMN3033LSDQ

Document number: DS37965 Rev. 1 - 2

4 of 6

www.diodes.com

July 2015

DMN3033LSDQ

Q - TOTAL GATE CHARGE (nC)

Fig. 7 Gate Charge

I = 7A

I = 9A

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

-50

-25

100

125 150

T , AMBIENT TEMPERATURE (°C)

1.3

1.6

1.9

2.2

2.5

I = 250µA

, SOURCE-DRAIN VOLTAGE (V)

Fig. 9 Diode Forward Voltage vs. Current

0.0001

0.001

0.01

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

0.001

0.01

0.1

Fig. 10 Transient Thermal Response

t , PULSE DURATION TIME (s)

0.00001

0.0001

0.001

0.01

0.1

100

1,000

T - T = P * R

(t)

Duty Cycle, D = t /t



(t) = r(t) *

JA

= 105°C/W



P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

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