Feb-18-2004

1

BF1005S...

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled

input stages up to 1 GHz

• Operating voltage 5 V

• Integrated biasing network

EHA07215

GND

G1

G2

Drain

AGC

HF

Input

HF Output

+DC

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Package

Pin Configuration

Marking

BF1005S

BF1005SR

BF1005SW

SOT143

SOT143R

SOT343

1=S

1=D

1=D

2=D

2=S

2=S

3=G2

3=G1

3=G1

4=G1

4=G2

4=G2

-

-

-

-

-

-

NZs

NZs

NZ

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source voltage

8

V

Continuous drain current

25

mA

Gate 1/ gate 2-source current

10

Gate 1 (external biasing)

3

V

Total power dissipation

200

200

mW

Storage temperature

-55 ... 150

°C

Channel temperature

150

Note:

It is not recommended to apply external DC-voltage on Gate 1 in active mode.