STF25N60M2-EP datasheet(5/14 Pages) STMICROELECTRONICS

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STF25N60M2-EP

Electrical characteristics

DocID027251 Rev 2

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Table 8: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 9 A

RG = 4.7

Ω, VGS = 10 V

(see Figure 15: "Switching

times test circuit for

resistive load" and Figure

20: "Switching time

waveform")

Rise time

td(off)

Turn-off-delay time

Fall time

Table 9: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 18 A

1.6

trr

Reverse recovery time

ISD = 18 A,

di/dt = 100 A/µs,

VDD = 100 V (see Figure

17: " Test circuit for

inductive load switching

and diode recovery times")

360

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 18 A,

di/dt = 100 A/µs,

VDD = 100 V, Tj = 150 °C

(see Figure 17: " Test

circuit for inductive load

switching and diode

recovery times")

445

Qrr

Reverse recovery charge

6.5

µC

IRRM

Reverse recovery current

Notes:

(1)

Pulse width is limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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