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STH400N4F6-2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STH400N4F6-2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. February 2014 DocID023429 Rev 2 1/18 STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 m Ω typ.,180 A STripFET™ VI DeepGATE™ Power MOSFETs Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the 6 th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R DS(on) in all packages. H2PAK-2 1 2 3 TAB H2PAK-6 1 TAB 7 D(TAB) G(1) S(2, 3) S(2, 3, 4, 5, 6, 7) G(1) D(TAB) H2PAK-2 H2PAK-6 AM14551V1 Order codes VDS RDS(on) max ID STH400N4F6-2 40 V 1.15 m Ω 180 A STH400N4F6-6 Table 1. Device summary Order codes Marking Package Packaging STH400N4F6-2 400N4F6 H 2 PAK-2 Tape and reel STH400N4F6-6 H 2 PAK-6 www.st.com |
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