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STM32L162VD Datasheet(PDF) 54 Page - STMicroelectronics

Part # STM32L162VD
Description  AES 128-bit encryption hardware accelerator
PDF  115 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L162VD Datasheet(HTML) 54 Page - STMicroelectronics

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Electrical characteristics
STM32L162VD-X
54/115
DocID027268 Rev 3
6.3.2
Embedded reset and power control block characteristics
The parameters given in the following table are derived from the tests performed under the
conditions summarized in Table 12.
3. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled.
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 66: Thermal characteristics
on page 111).
5. In low-power dissipation state, TA can be extended to -40°C to 105°C temperature range as long as TJ does not exceed TJ
max (see Table 66: Thermal characteristics on page 111).
Table 13. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tVDD(1)
VDD rise time rate
BOR detector enabled
0
-
∞
µs/V
BOR detector disabled
0
-
1000
VDD fall time rate
BOR detector enabled
20
-
∞
BOR detector disabled
0
-
1000
TRSTTEMPO(1) Reset temporization
VDD rising, BOR enabled
-
2
3.3
ms
VDD rising, BOR disabled(2)
0.4
0.7
1.6
VPOR/PDR
Power on/power down reset
threshold
Falling edge
1
1.5
1.65
V
Rising edge
1.3
1.5
1.65
VBOR0
Brown-out reset threshold 0
Falling edge
1.67
1.7
1.74
Rising edge
1.69
1.76
1.8
VBOR1
Brown-out reset threshold 1
Falling edge
1.87
1.93
1.97
Rising edge
1.96
2.03
2.07
VBOR2
Brown-out reset threshold 2
Falling edge
2.22
2.30
2.35
Rising edge
2.31
2.41
2.44



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