STP10LN80K5 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STP10LN80K5

4/14

DocID027747 Rev 2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

800

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 800 V

µA

VGS = 0 V, VDS = 800 V

TC = 125 °C

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDD = VGS, ID = 100 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 4 A

0.55

0.63

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

427

Coss

Output capacitance

Crss

Reverse transfer capacitance

0.25

Co(tr)

(1)

Equivalent capacitance time

VDS = 0 to 640 V,

VGS = 0 V

Co(er)

(2)

Equivalent capacitance energy

Intrinsic gate resistance

f = 1 MHz , ID= 0 A

Ω

Total gate charge

VDD = 640 V, ID = 8 A

VGS= 10 V

See Figure 16: "Test

circuit for gate charge

behavior"

Qgs

Gate-source charge

4.2

Qgd

Gate-drain charge

Notes:

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when

VDS increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 400 V, ID = 4 A, RG = 4.7 Ω

VGS = 10 V

See Figure 15: "Test circuit for

resistive load switching times"

and Figure 20: "Switching time

waveform"

11.8

Rise time

td(off)

Turn-off delay time

Fall time

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