SCT20N120 datasheet(5/13 Pages) STMICROELECTRONICS

5 / 13 page

DocID026413 Rev 4

5/13

SCT20N120

Electrical characteristics

Table 6. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Eon

Turn-on switching losses

VDD = 800 V, ID = 10 A

RG=6.8 Ω, VGS = -2/20 V

160

µJ

Eoff

Turn-off switching losses

µJ

Eon

Turn-on switching losses

VDD = 800 V, ID = 10 A

RG=6.8 Ω, VGS = -2/20 V

TJ= 150 °C

165

µJ

Eoff

Turn-off switching losses

100

µJ

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)V

Turn-on delay time

VDD = 800 V, ID = 10 A,

RG = 0 Ω, VGS = 0/20 V

-10

tf(V)

Fall time

td(off)V

Turn-off delay time

tr(V)

Rise time

Table 8. Reverse SiC diode characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

VSD

Diode forward voltage

IF = 5 A, VGS = -5 V

3.6

trr

Reverse recovery time

ISD =10 A, VGS =-5 V,

VR =800 V,

dif/dt = 1650 A/µs

-15

Qrr

Reverse recovery charge

Irrm

Peak reverse recovery current

SCT20N120 Datasheet(PDF) 5 Page - STMicroelectronics

SCT20N120 Datasheet(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL