STB34N50DM2AG datasheet(1/15 Pages) STMICROELECTRONICS

Part #	STB34N50DM2AG

Description	Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A MDmesh™ DM2 Power MOSFET in a D²PAK package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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August 2015

DocID028248 Rev 1

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This is information on a product in full production.

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STB34N50DM2AG

Automotive-grade N-channel 500 V, 0.10

Ω typ., 26 A

MDmesh™ DM2 Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max.

ID

PTOT

STB34N50DM2AG

500 V

0.12

Ω

26 A

190 W



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part

of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB34N50DM2AG

34N50DM2

D²PAK

Tape and reel

1

3

TAB

D2PAK

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