STB34N50DM2AG

Electrical characteristics

DocID028248 Rev 1

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Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

26

A

Source-drain current

(pulsed)

-

104

A

VSD(2)

Forward on voltage

-

1.6

V

Reverse recovery time

"Test circuit for inductive load

switching and diode recovery

times")

-

110

ns

Reverse recovery charge

-

0.48

µC

Reverse recovery current

-

8.8

A

Reverse recovery time

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

190

ns

Reverse recovery charge

-

1.52

µC

Reverse recovery current

-

16

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.