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STH170N8F7-2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STH170N8F7-2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  This is information on a product in full production. February 2015 DocID026382 Rev 2 1/15 STH170N8F7-2 N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet — production data Figure 1. Internal schematic diagram Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 1 2 3 TAB H2PAK-2 Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W Table 1. Device summary Order code Marking Package Packaging STH170N8F7-2 170N8F7 H2PAK-2 Tape and reel www.st.com |
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