STL7LN80K5

Electrical characteristics

DocID028831 Rev 2

5/16

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

5

A

(1)

Source-drain current

(pulsed)

-

20

A

(2)

Forward on voltage

-

1.6

V

Reverse recovery time

circuit for inductive load switching

and diode recovery times")

-

276

ns

Reverse recovery

charge

-

2.13

µC

Reverse recovery

current

-

15.4

A

Reverse recovery time

(see Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

-

402

ns

Reverse recovery

charge

-

2.79

µC

Reverse recovery

current

-

13.9

A

Notes:

(1)

Pulse width is limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.