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STL19N65M5 Datasheet(PDF) 8 Page - STMicroelectronics |
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STL19N65M5 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 17 page ![]() Electrical characteristics STL19N65M5 8/17 DocID024984 Rev 1 Figure 14. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode E 0 0 20 RG( Ω) (µJ) 10 30 20 40 40 ID=9.5 A VDD=400 V Eon Eoff 60 VGS=10 V 80 160 100 120 140 AM15771v1 |
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