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STL19N65M5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL19N65M5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 17 page ![]() This is information on a product in full production. July 2013 DocID024984 Rev 1 1/17 STL19N65M5 N-channel 650 V, 0.215 Ω typ., 12.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Figure 1. Internal schematic diagram Features • Worldwide best R DS(on) * area • Higher V DSS rating and high dv/dt capability • Excellent switching performance Applications • Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Order code VDS RDS(on)max. ID STL19N65M5 710 V 0.240 Ω 12.5 A (1) 1. The value is rated according to R thj-case and limited by package. Table 1. Device summary Order code Marking Package Packaging STL19N65M5 19N65M5 PowerFLAT™ 8x8 HV Tape and reel www.st.com |
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