STL20DNF06LAG datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL20DNF06LAG

4/15

DocID028242 Rev 1

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 60 V

µA

VGS = 0 V, VDS = 60 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 4 A

mΩ

VGS = 5 V, ID = 4 A

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

670

Coss

Output capacitance

170

Crss

Reverse transfer capacitance

Total gate charge

VDD = 25 V, ID = 7.4 A,

VGS = 10 V (see Figure 15:

"Gate charge test circuit")

22.5

Qgs

Gate-source charge

2.5

Qgd

Gate-drain charge

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 3.7 A

RG = 4.7

Ω, VGS = 10 V

(see Figure 14: "Switching

times test circuit for

resistive load" and Figure

19: "Switching time

waveform")

Rise time

15.4

td(off)

Turn-off delay time

36.8

Fall time

7.7

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