Data Sheet

1

2004-04-05

PTF080901E

Package 30248

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

36

38

40

42

44

46

48

50

Output Power (dBm)

10

15

20

25

30

35

40

45

50

55

EDGE Modulation Spectrum Performance

Efficiency

400 kHz

600 kHz

PTF080901

LDMOS RF Power Field Effect Transistor

90 W, 869–960 MHz

Features

•

Broadband internal matching

•

Typical EDGE performance

- Average output power = 45 W

- Gain = 18 dB

- Efficiency = 40%

•

Typical CW performance

- Output power at P–1dB = 120 W

- Gain = 17 dB

- Efficiency = 60%

•

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

•

Excellent thermal stability

•

Low HCI drift

•

Capable of handling 10:1 VSWR @ 28 V,

90 W (CW) output power

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended

for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold

metallization ensures excellent device lifetime and reliability.

Characteristic

Symbol

Min

Typ

Max

Unit

Error Vector Magnitude

EVM (RMS)

—

2.5

—

%

Modulation Spectrum @ 400 kHz

ACPR

—

–62

—

dBc

Modulation Spectrum @ 600 kHz

ACPR

—

–74

—

dBc

Gain

—

18

—

dB

Drain Efficiency

η

D

—

40

—

%

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

17

18

—

dB

Drain Efficiency

η

D

40

42

—

%

Intermodulation Distortion

IMD

—

–32

–29

dBc

PTF080901F

Package 31248