PTF080901F datasheet(3/10 Pages) INFINEON

Part #	PTF080901F

Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 10 page

Data Sheet

2004-04-05

PTF080901

-80

-70

-60

-50

-40

-30

-20

-10

Output Power (dBm), PEP

Intermodulation Distortion vs. Output Power

(as measured in a broadband circuit)

VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz

3rd Order

7th

5th

860

880

900

920

940

960

Frequency (MHz)

Output Pow er

Efficiency

Gain

Typical POUT, Gain & Efficiency (at P-1dB)

vs. Frequency

VDD = 28 V, IDQ = 650 mA

Typical Performance (cont.)

All published data at TCASE = 25°C unless otherwise indicated.

IM3 vs. Output Power at Selected Biases

VDD = 28 V, f1 = 959, f2 = 960 MHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

Output Power (dBm), PEP

480 mA

820 mA

650 mA

Broadband Performance

VDD = 28 V, IDQ = 650 mA, POUT = 45 W

860

880

900

920

940

960

Frequency (MHz)

-15

-12

-9

-6

-3

Gain

Return Loss

Efficiency

PTF080901F Datasheet(PDF) 3 Page - Infineon Technologies AG

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