08090 datasheet(5/10 Pages) INFINEON

Part #	08090

Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 10 page

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PTF080901

Typical Performance (cont.)

Three–Carrier CDMA 2000 Performance

VDD = 28 V, IDQ = 700 mA, f = 880 MHz

Output Power (dBm), Avg.

-65

-62

-59

-56

-53

-50

-47

-44

Efficiency

ALT Up

ACP Low

ACP Up

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage.

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20

100

Case Temperature (ºC)

1.50 A

3.00 A

4.50 A

6.00 A

7.50 A

9.00 A

All published data at TCASE = 25°C unless otherwise indicated.

Broadband Circuit Impedance

0.1

860 MHz

980 MHz

Z Load

Z Source

Z0 = 50 Ω

Frequency

Z Source

Ω

Z Load

Ω

MHz

860

2.50

–1.09

1.98

–1.08

920

2.67

–0.43

1.99

–0.32

940

2.79

–0.35

1.87

–0.21

960

2.94

0.12

1.85

0.27

980

2.91

0.37

1.79

0.53

Z Source

Z Load

Data Sheet

2004-04-05

08090 Datasheet(PDF) 5 Page - Infineon Technologies AG

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