ACE3926E datasheet(3/7 Pages) ACE

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ACE3926E

Dual N-Channel 20-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

0.4

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±12 V

±10

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

VDS = 16V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 4.5 V

Drain-Source On-Resistance

RDS(ON)

VGS = 4.5 V ID = 2 A

mΩ

VGS = 2.5 V, ID =1.6 A

Forward Transconductance

gFS

VDS =15 V, ID = 2 A

Diode Forward Voltage

VSD

IS = 3.5 A, VGS = 0 V

0.8

Dynamic

Total Gate Charge

VDS = 10V, VGS = 4.5 V, ID = 2 A

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

3.7

Turn-On Delay Time

td(on)

VDS = 10 V, RL = 5 Ω,

ID = 2 A, VGEN = 4.5 V , RGEN = 6 Ω,

178

Rise Time

332

Turn-Off Delay Time

td(off)

1939

Fall Time

902

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 Mhz

1225

Output Capacitance

Coss

151

Reverse Transfer Capacitance

Crss

123

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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