ACE4835M datasheet(3/7 Pages) ACE

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ACE4835M

P-Channel 30-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 uA

-1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = -24 V, VGS = 0 V

-1

VDS = -24 V, VGS = 0 V, TJ = 55°C

-25

On-State Drain Current

ID(on)

VDS =- 5 V, VGS =- 10 V

-20

Drain-Source On-Resistance

RDS(ON)

VGS = - 10 V, ID = - 7.6 A

mΩ

VGS = -4.5 V, ID = - 6A

Forward Transconductance

gFS

VDS = - 15 V, ID = -7.6 A

Diode Forward Voltage

VSD

IS = - 2A, VGS = 0 V

-0.74

Dynamic

Total Gate Charge

VDS = -15 V, VGS = -4.5 V, ID = -7.6 A

Gate-Source Charge

Qgs

6.8

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = -15 V, RL = 1.9 Ω, ID = -7.6 A,

VGEN = -10 V, RGEN = 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

1934

Output Capacitance

Coss

408

Reverse Transfer Capacitance

Crss

226

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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