ACE4835M datasheet(1/7 Pages) ACE

Part #	ACE4835M

Description	P-Channel 30-V MOSFET

PDF	7 Pages

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Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4835M

P-Channel 30-V MOSFET

VER 1.1

1

Description

The ACE4835M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous

Drain Current

a

TA=25℃

ID

-9.5

A

TA=70℃

-8.3

Pulsed Drain Current

b

IDM

-50

A

Continuous Source Current (Diode Conduction)

a

IS

-4

A

Power Dissipation

a

TA=25℃

PD

3.1

W

TA=70℃

2.2

Operating temperature / storage temperature

TJ/TSTG -55~150

℃

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

40

°C/W

Steady State

80

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

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ACE4835M Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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