RT3AMMAM1 datasheet(1/4 Pages) ISAHAYA

Part #	RT3AMMAM1

Description	Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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PRELIMINARY

RT3AMMAM1

Composite Transistor

For Low Frequency Amplify Application

Silicon Pnp Epitaxial Type

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

RT3AMMAM1 is compound transistor built with two

ISA1235A chips in SC-88 package.

FEATURE

Silicon PNP epitaxial type

Each transistor elements are independent.

Mini package for easy mounting.

APPLICATION

For low frequency amplify application.

OUTLINE DRAWING

Unit：mm

MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.)

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to Base voltage

-60

V

VEBO

Emitter to Base voltage

-6

V

VCEO

Collector to Emitter voltage

-50

V

IC

Collector current

-200

mA

PC

Collector dissipation（Total,Ta=25℃）

150

mW

Tj

Junction temperature

＋

150

℃

Tstg

Storage temperature

-55～＋150

℃

MARKING

F

AA

１

2

3

6

5

4

.

TERMINAL

CONNECTOR

①：

EMITTER1

②：

BASE1

③：

COLLECTOR2

④：

EMITTER2

⑤：

BASE2

⑥

:COLLECTOR1

JEITA：SC-88

Tr1

Tr2

1.25

2.1

①

②

③

⑤

④

⑥

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RT3AMMAM1 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation

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