RT3AMMAM1 datasheet(3/4 Pages) ISAHAYA

Part #	RT3AMMAM1

Description	Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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3 / 4 page

PRELIMINARY

RT3AMMAM1

Composite Transistor

For Low Frequency Amplify Application

Silicon Pnp Epitaxial Type

ISAHAYA ELECTRONICS CORPORATION

TYPICAL CHARACTERISTICS (Tr1,r2.)

GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT

100

200

300

400

0.1

100

EMITTER CURRENT IE[mA]

VCE=-6V

COLLECTOR OUTPUT CAPACITANCE

VS. COLLECTOR TO BASE VOLTAGE

100

-0.1

-1

-10

-100

COLLECTOR TO BASE VOLTAGE VCB[V]

COMMON EMITTER TRANSFER

-0

-10

-20

-30

-40

-50

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

BASE TO EMITTER VOLTAGE VBE[V]

VCE=-6V

COMMON EMITTER OUTPUT

IB=0

IB=-0.02mA

IB=-0.04mA

IB=-0.06mA

IB=-0.08mA

IB=-0.10mA

IB=-0.12mA

IB=-0.14mA

IB=-0.16mA

IB=-0.18mA

IB=-0.20mA

-0

-10

-20

-30

-40

-50

-0

-1

-2

-3

-4

-5

COLLECTOR・EMITTER VOLTAGE VCE(V)

DC FORWARD CURRENT GAIN VS.

COLLECTOR CURRENT

100

1000

-0.1

-1

-10

-100

-1000

COLLECTOR CURRENT IC[mA]

VCE=-6V

100(@IC=-1mA)

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