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AP8600P Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP8600P Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 6 page ![]() AP8600P Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 2000 4000 6000 8000 1 2141 6181 101 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 0 2040 6080 100 Q G , Total Gate Charge (nC) I D =40A V DS =64V 0.1 1 10 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0 20 40 60 80 100 120 25 50 75 100 125 150 T C , Case Temperature ( o C ) Limited by package 0 40 80 120 160 02468 10 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V T j = -55 o C . |
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