LM5109AMASLASHNOPB datasheet(4/18 Pages) TI1

4 / 18 page

LM5109A

SNVS412B – APRIL 2006 – REVISED MARCH 2016

www.ti.com

Product Folder Links: LM5109A

Submit Documentation Feedback

(1)

The human body model is a 100 pF capacitor discharged through a 1.5k

Ω resistor into each pin.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM) (1)

±1500

(1)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally

not exceed –1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated

voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD – 15V. For example, if

VDD = 10V, the negative transients at HS must not exceed –5V.

6.3 Recommended Operating Conditions

VDD

8V to 14V

HS(1)

−1V to 90V

VHS + 8V to VHS + 14V

HS Slew Rate

< 50 V/ns

Junction Temperature

−40°C to 125°C

(1)

Minimum and maximum limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through

correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

6.4 Electrical Characteristics

Specifications in standard typeface are for TJ = 25°C, and those in boldface type apply over the full operating junction

temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO

(1).

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Supply Currents

IDD

VDD quiescent current

LI = HI = 0V

0.3

0.6

IDDO

VDD operating current

f = 500 kHz

1.8

2.9

IHB

Total HB quiescent current

LI = HI = 0V

0.06

0.2

IHBO

Total HB operating current

f = 500 kHz

1.4

2.8

IHBS

HB to VSS current, quiescent

VHS = VHB = 90V

0.1

µA

IHBSO

HB to VSS current, operating

f = 500 kHz

0.5

Input Pins LI and HI

VIL

Low-level input voltage threshold

0.8

1.8

VIH

High-level input voltage threshold

1.8

2.2

Input pulldown resistance

100

200

500

Ω

Under-Voltage Protection

VDDR

VDD rising threshold

VDDR = VDD – VSS

6.0

6.7

7.4

VDDH

VDD threshold hysteresis

0.5

VHBR

HB rising threshold

VHBR = VHB – VHS

5.7

6.6

7.1

VHBH

HB threshold hysteresis

0.4

LO Gate Driver

VOLL

Low-level output voltage

ILO = 100 mA, VOHL = VLO – VSS

0.38

0.65

VOHL

High-level output voltage

ILO = −100 mA, VOHL = VDD – VLO

0.72

1.20

IOHL

Peak pullup current

VLO = 0V

1.0

IOLL

Peak pulldown current

VLO = 12V

1.0

HO Gate Driver

VOLH

Low-level output voltage

IHO = 100 mA, VOLH = VHO – VHS

0.38

0.65

VOHH

High-level output voltage

IHO = −100 mA, VOHH = VHB – VHO

0.72

1.20

IOHH

Peak pullup current

VHO = 0V

1.0

IOLH

Peak pulldown current

VHO = 12V

1.0

Thermal Resistance

LM5109AMA/NOPB Datasheet(PDF) 4 Page - Texas Instruments

LM5109AMA/NOPB Datasheet(HTML) 4 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Datasheet Download

Link URL