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S-807 Datasheet(PDF) 21 Page - Seiko Instruments Inc

Part # S-807
Description  HIGH-PRECISION VOLTAGE DETECTOR
PDF  42 Pages
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-807 Datasheet(HTML) 21 Page - Seiko Instruments Inc

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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
20
Seiko Instruments Inc.
40. S-80747AL/AL-EB-X, S-80747AN-JB-X (Detection voltage : 4.587 to 4.813 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.587
4.700
4.813
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.59
mV/
°C
41. S-80748AL-EC-X, S-80748AN/AN-JC-X (Detection voltage : 4.684 to 4.916 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.684
4.800
4.916
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.60
mV/
°C
42. S-80749AL-ED-X, S-80749AN-JD-X (Detection voltage : 4.782 to 5.018 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
4.782
4.900
5.018
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V1
Current consumption
ISS
VDD = 6.0 V
1.0
3.0
µA2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
VDD = 2.4 V
1.60
3.70
VDD = 3.6 V
3.18
7.00
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 6.0 V
0.46
0.75
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.61
mV/
°C
∆-V
DET
∆Ta
∆-V
DET
∆Ta
∆-V
DET
∆Ta



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