SPDT Switch & Limiter

2.7 - 3.5 GHz

Rev. V2

MASL-011023

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Visit www.macomtech.com for additional data sheets and product information.

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Parameter

Absolute Maximum

Operating Temperature

-55°C to +85°C

Storage Temperature

-65°C to +150°C

+175°C

Applied Reverse Voltage

100 V

125 W @ +85°C

150 mA

Driver Conditions

switching diode. ―Rcom‖ is 220 Ω. G1 is connected to

ground externally. See Application Circuit Diagram.

Bias Control

Optimal operation is achieved by simultaneous

application of positive DC voltage to the low loss

switching arm and negative DC voltage to the

isolating switching arm.

In the low loss state, the diode is forward biased with

current. In the isolated state, the series diode is

reverse biased with voltage.

30 V DC Voltage for 125 W CW Power

R. Caverly and G. Hiller, ―Establishing the Minimum Reverse

Bias for a P-I-N Diode in a High Power Switch,‖ IEEE Transac-

tions on Microwave Theory and Techniques, Vol.38, No.12,

December 1990

Control Level DC Voltages

(resulting currents)

G1 = Ground, A1 = N/C

Condition of

RF Output

B3

B1

+30V (132 mA)

+30V (132 mA)

-5V (0mA)

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

RF Integrated Circuits are sensitive to electrostatic

discharge (ESD) and can be damaged by static

electricity. Proper ESD control techniques should

be used when handling these devices.

3. Exceeding any one or combination of these limits may cause

permanent damage to this device.

4. MACOM does not recommend sustained operation near these

survivability limits.